transistor (npn) features z low collector to emitter saturation voltage v ce(sat) =0.3v max(@i c =100ma,i b =10ma) z excellent linearity of dc forward current gain maximum ratings (t a =25 unless otherwise noted) electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br) cbo i c = 100 a, i e =0 50 v collector-emitter breakdown voltage v (br) ceo i c = 100 a, i b =0 50 v emitter-base breakdown voltage v (br) ebo i e = 100 a, i c =0 6 v collector cut-off current i cbo v cb = 50 v , i e =0 0.1 a emitter cut-off current i ebo v eb = 6v , i c =0 0.1 a h fe(1) v ce = 6v, i c = 1ma 150 800 dc current gain h fe(2) v ce = 6v, i c = 0.1ma 50 collector-emitter saturation voltage v ce (sat) i c =100ma, i b = 10ma 0.3 v base-emitter saturation voltage v be (sat) i c = 100ma, i b = 10ma 1 v transition frequency f t v ce = 6v, i c = 10ma 180 mhz collector output capacitance c ob v ce =6v, i e =0, f=1mhz 4 pf noise figure nf v ce =6v,i e =-0.1ma, f=1khz, r g =2k ? 15 db classification of h fe(1) rank e f g range 150~300 250~500 400~800 marking le lf lg symbol parameter value units v cbo collector- base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 6 v i c collector current -continuous 0.2 a p c collector power dissipation 150 mw t j junction temperature 125 t stg storage temperature -55-125 so t -23 1. base 2. emitter 3. collector 1 www.htsemi.com semiconductor jinyu 2SC3052
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3 www.htsemi.com semiconductor jinyu 2SC3052
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